用外腔半导体激光获取强荧光物质的拉曼特征峰位  

Measuring characteristic Raman peaks of highly fluorescent materials using an external cavity diode laser

作　　者：娄秀涛[1] 徐连杰[1] 

机构地区：[1]哈尔滨工业大学物理系,黑龙江哈尔滨150001

出　　处：《物理实验》2017年第2期10-12,16,共4页Physics Experimentation

基　　金：黑龙江省高等学校教改工程项目(No.JG2014010690)

摘　　要：利用外腔半导体激光器为激发光源,采用移频激发法测量了强荧光物质三环唑的拉曼特征峰位.实验结果显示:在783.2nm和785.7nm激发波长下采集的三环唑样品拉曼光谱信号严格重合,400~1 500cm-1拉曼差分光谱在596,1 319,1 373cm-1有明显的拉曼特征峰,与文献报道一致.Using an external cavity diode laser as excitation light source,the frequency shift excitation method was used to measure the characteristic Raman peaks of the strong fluorescence material tricyclazole.Experimental results showed that the Raman signals were strictly coincident when the excitation wavelength was 783.2nm and 785.7nm,and obvious characteristic Raman peaks existed at596,1 319,1 373cm-1 in the 400~1 500cm-1 Raman difference spectra,which was consistent with literature reports.

关 键 词：拉曼光谱 外腔半导体激光 荧光物质 移频激发 

分 类 号：O433[机械工程—光学工程]