我国高压并联补偿电容器介质绝缘耐受水平的研究  

Study on Insulation Withstand Level of High Voltage Shunt Compensation Capacitor in China

作　　者：林浩[1] 倪学锋[1] 姜胜宝[1] 国江[1] 罗天鸣 彭鹏 

机构地区：[1]中国电力科学研究院,湖北武汉430074 [2]国网陕西省电力公司电力科学研究院,陕西西安710054

出　　处：《电力电容器与无功补偿》2017年第1期61-64,共4页Power Capacitor & Reactive Power Compensation

基　　金：国家电网公司科技项目(GY71-15-055)

摘　　要：我国全膜高压并联补偿电容器经过20年的普及使用,不论是生产厂家还是用户均有人提出:当年由全国无功补偿装置专家工作组确定的全膜电容器设计场强不宜大于57 k V/mm(k=1)的指标不适用了,应提高电容器设计场强。经对我国主导生产厂家的三膜结构并联电容器绝缘耐受水平的研究,得出专家工作组的这一规定对我国全膜高压并联电容器健康快速发展起到了十分关键的作用,进一步提高设计场强应谨慎,应在进行充分研究的基础上再做提高设计场强变更,否则对产品的运行可靠性是不利的。The widespread application for film high voltage capacitor in China has passed 20 years,either the manufacturer and customer point out that the index that the design field strength not over 57 kV/mm（k=1）of film capacitor,which defined by the reactive power compensation experts in China at that time is not applicable any longer and the design field strength shall be improved. It is concluded throughout the study on insulation withstand level of shunt capacitor with three-film structure from the leading capacitor manufacturers in China that this specification of the expert working group plays crucial role for the rapid development of film shunt capacitor in China,and further improvement of the design field strength shall be careful. The alteration of improving design field strength shall be carried out on the basis of comprehensive study,otherwise it will not be beneficial to the operation reliability of the capacitor.

关 键 词：并联补偿电容器 三膜结构 设计场强 绝缘耐受水平 

分 类 号：TM53[电气工程—电器]