真空喷涂高分子包埋TiO_2纳米粒子薄膜阻变特性  

Resistive Switching of Polymer Thin Films Embedded with TiO_2 Nanoparticles by Vacuum Spraying

作　　者：李玥[1] 邵思佳 李建昌[1] 

机构地区：[1]东北大学机械工程与自动化学院真空流体工程研究中心,辽宁沈阳110819

出　　处：《真空》2017年第1期34-37,共4页Vacuum

摘　　要：真空喷涂制备了PFBT包埋Ti O2纳米粒子(NPs)高分子复合薄膜,利用Ga In/PFBT+Ti O2NPs/ITO器件结构对薄膜进行了伏安特性测试,研究分子与NPs质量比对其电学输运特性的影响。结果表明:器件均具有双极阻变开关特性,质量比对其电学特性影响不明显。分析发现薄膜高低阻态输运均为欧姆特性,阻变机理为电荷的捕获和释放,结合第一性原理计算验证,表明引入NPs后薄膜陷阱变浅导致其开关比较小。Thin films of poly [（9,9-di-n-octylfluorenyl-2,7-diyl）-alt-（benzo [2,1,3]thiodia-zol-4,8-diyl）]（PFBT） embedded with different ratios of TiO_2 nanoparticles（NPs） were deposited onto ITO substrate by vacuum spraying method. The current-voltage characteristics of the films were measured with using Ga In droplet electrode. The devices exhibited bistable resistance states, and the charge transports at low and high resistance states are both dominated by the Ohmic mechanism. The switching mechanism can be ascribed to the charge trapping and detrapping processes. The first-principles calculations show that the shallow traps due to the NPs inducement will lead to a lower ON/OFF ratio.

关 键 词：高分子 TIO2纳米粒子 复合薄膜 荷电输运 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]