高饱和磁通密度NiZn铁氧体材料TN35B  

High Bs NiZn ferrite material TN35B

作　　者：陈诚海 徐鑫[1] 马占华[1] 李小龙[1] 

机构地区：[1]天通控股股份有限公司磁性材料研究所,海宁314412

出　　处：《磁性元件与电源》2017年第1期119-121,共3页Components and Power

摘　　要：采用传统氧化物法制备了主配方为Ni0.402Cu0.118ZnO0．480Fe2O4的NiZn铁氧体材料TN35B，并对其微观结构和电性能进行了分析。结果表明，相对于NiZn常规材料，TN35B材料通过配方改进饱和磁通密度从410mT提升到T465mT，居里温度从250℃提升到了270℃，其他磁性能保持了相同的水平。TN35B材料饱和磁通密度的大幅提升，从而其制成的DRC型磁心的直流偏置特性也有显著提升，能够较好的满足高性能功率电感的要求。The Ni0.402Cu0. 118Zn0.480Fe2O4 method. The microstructure NiZn ferrite material TN35B was and magnetic properties of TN3 pr 5B epared by conventional oxide ceramic were studied. Compared with that of conventional NiZn material, the test results showed that the saturation magnetic flux density and the curie temperature of TN35B increased respectively from 410mT to 465mT and 250℃ to 270℃. Meanwhile, other magnetic performance of TN35B was not degraded. The saturation magnetic flux density of TN35B increased remarkably, and resultantly its DC bias of DRC-core was improved as well. TN35B material can fully satisfy the requirements of high-performance power inductor.

关 键 词：Ni Zn铁氧体材料 饱和磁通密度 直流偏置特性 功率电感 

分 类 号：TQ584[化学工程—精细化工]