低磷胁迫下加硅对玉米苗期硅、磷营养及叶绿素荧光参数的影响  

Silicon Application on Silicon and Phosphorus Nutrition and Chlorophyll Fluorescence Parameters of Maize During Seedling Stage Under Low Phosphorus Stress

作　　者：朱从桦[1,2] 张鸿[2] 袁继超[1] 张嘉莉[1] 蒋艺[1] 王兴龙[1] 孔凡磊[1] 

机构地区：[1]四川农业大学农学院,成都611130 [2]四川省农业科学院植物保护研究所,成都610066

出　　处：《水土保持学报》2017年第1期303-309,共7页Journal of Soil and Water Conservation

基　　金：国家科技支撑计划项目(2012BAD04B13-2);公益性行业(农业)科研专项(20150312705)

摘　　要：为研究硅对低磷胁迫下玉米苗期硅、磷吸收积累和叶绿素荧光参数的影响,采用砂培方式模拟低磷胁迫环境,以玉米品种正红2号和正红115为供试材料,设置3个磷浓度:重度低磷胁迫P1(0.01mmol/L)、中度低磷胁迫P2(0.1 mmol/L)和正常磷浓度P3(1 mmol/L),设置3个硅浓度:Si1(0 mmol/L)、Si2(0.75mmol/L)和Si3(1.5mmol/L),定苗培养28d,测定植株顶部往下第1全展叶叶绿素荧光参数、植株干物质重、硅和磷素含量和积累量。结果表明:(1)磷浓度从P3降低至P2和P1,2个玉米品种平均,单株干物质积累量、硅积累量、磷积累量分别下降34.73%,39.26%,29.10%,33.01%,81.81%,87.63%;同时降低叶片PSⅡ反应中心开放程度、减弱光能捕获和光能转换能力、降低电子传递效率,导致植株叶片热耗散能力明显增强。(2)硅浓度从Si1增加至Si2和Si3,2个玉米品种平均,单株干物质积累量、硅积累量、磷积累量分别提高21.54%,36.05%,120.08%,236.65%,39.81%,69.17%;同时增加叶片PSⅡ反应中心开放程度,提高光能捕获和光能转换效率,增加电子传递效率,加速利用过剩激发能。(3)玉米植株硅积累量和磷积累量呈显著正相关,并且Fv/Fm(XE)、Fv′/Fm′(XE′)、Fq′/Fm′(φPSⅡ)、ETR与植株硅积累量和磷积累量也呈显著正相关。(4)在P3和P2处理中,与Si1相比,Si2和Si3能明显提高正红2号和正红115植株硅、磷素积累量,提高叶片对光能的捕获、转化和传递效率,提高植株的干物质积累量;在重度低磷胁迫P1处理中施硅对玉米幼苗硅、磷营养和叶绿素荧光参数的改善作用十分微弱。综上所述,在非严重低磷胁迫条件下,外源加硅可以增强玉米对硅、磷的吸收和积累,提高叶片光合物质生产能力,加速消耗过剩的激发能,减轻光抑制。Under low phosphorus stress,the benefits of Si application on improving Si accumulation,P accumulation and chlorophyll fluorescence parameters of maize during seedling stage were investigated using medium ZH2 and ZH115by sand culture experiment.The treatments consisted of three P levels（0.01mmol/L,0.1mmol/L and 1mmol/L）and three Si levels（0mmol/L,0.75mmol/L and 1.5mmol/L）.Maize seedlings were incubated for 28 days,then the items were measured,including chlorophyll fluorescence parameters of the first top fully expanded leaf,dry matter accumulation,Si content and accumulation,P content and accumulation.The main results were as follows：（1）The dry matter accumulation,Si and P accumulation amount of these two varieties（ZH2and ZH115）reduced by 34.73% and 39.26%,29.10% and 33.01%,81.81%and 87.63% in average,meanwhile the open degree of PSⅡ reaction center,efficiency of lightcapture,efficiency of light energy transformation and electron transportation of the leaf all decreased significantly,andheat dissipation of the leaf also increased with P concentration from P3 to P2and P1 in culture medium.（2）The dry matter accumulation,Si and P accumulation amount of these two varieties（ZH2and ZH115）increased by21.54%and 36.05%,120.08%and 236.65%,39.81%and 69.17%in average,meanwhile the open degree of PSⅡ reaction center,efficiency of lightcapture,efficiency of light energy transformation and electron transportation of leaf also increased significantly with Si concentration from Si1 to Si2and Si3 in culture medium.（3）There were significantly positive correlation between P accumulation and Si accumulation in plant.Fv/Fm（XE）,Fv′/Fm′（XE′）,Fq′/Fm′（φPSⅡ）,and ETR showed significantly positive correlation with P accumulation in plant,and the same with Si accumulation.（4）When P concentration in culture medium was 1mmol/L or 0.1mmol/L,comparing to treatment of Si1,dry matter accumulation,Si accumulation,P accumulation,efficiency of light energy transformation and electron trans

关 键 词：低磷胁迫 硅 磷 叶绿素荧光参数 干物质 

分 类 号：Q945.1[生物学—植物学]