量子电容对CNT填充的屏蔽型TSV的传输性能影响研究  

Study on the Impact of Quantum Capacitance of Carbon Nanotubes on the Transmission Performance of Shielded Through-Silicon Vias

作　　者：苏晋荣[1] 张文梅[1] 

机构地区：[1]山西大学物理电子工程学院,山西太原030006

出　　处：《量子光学学报》2017年第1期67-73,共7页Journal of Quantum Optics

基　　金：国家自然科学基金(61271160);山西省自然科学青年基金(2014021021-1;2015011042)

摘　　要：本文提出以苯并环丁烯(benzocyclobutene,BCB)或硅为介质层材料,用碳纳米管(Carbon Nanotube,CNT)填充的屏蔽型硅通孔(Shielded Through-Silicon Vias,S-TSV)结构,利用等效传输线模型计算了其正向传输系数和衰减常数,分析了量子电容(Quantum Capacitance,Cq)对S-TSV传输性能的影响。研究发现,Cq能改善以BCB为介质层,填充多壁碳纳米管束(Multi-walled carbon nanotube bundle,MWCNTB)的S-TSV高于20GHz频段的传输性能。此外,Cq可以明显提升以硅为介质层的S-TSV的传输性能,且Cq的温度效应能与硅电导的温度效应平衡,从而提高S-TSV的热稳定性。Shielded through-silicon vias（S-TSV）filled with carbon nanotubes（CNT）in the via and the shielded layer,and benzocyclobutene or silicon in the insulation layer was presented in this paper.Then,the equivalent transmission line models of the S-TSVs were constructed.Based on the model,the forward transmission coefficient and attenuation constant had been calculated before the impact of quantum capacitance（Cq）of CNT on the transmission performance of S-TSVs was analyzed.The results show that the transmission performance above 20 GHz of S-TSV filled with BCB and MWCNT bundle can be significantly improved by Cq.Also,the performance of S-TSVs with silicon insulation layer can be improved by Cq.Besides,Cqcan balance the temperature effect of silicon so that the heat stability of S-TSV with silicon insulation layer is improved.

关 键 词：碳纳米管 硅通孔 量子电容 正向传输系数 

分 类 号：TN47[电子电信—微电子学与固体电子学]