Problems and Properties of a Current Amplifier When Realized in Ultra Deep Sub-micron Technology  

作　　者：Simeon Kostadinov Ivan Uzunov Dobromir Gaydazhiev 

机构地区：[1]Smartcom Bulgaria AD, Department of Microelectronics, 36 Dragan Tzankov blvd., Sofia 1040, Bulgaria [2]SmartLab AD, BIC IZOT, Build. 1, 133 Tzarigr. Shosse blvd., Sofia 1784, Bulgaria [3]Smartcom Bulgaria AD, Department of Microelectronics, 36 Dragan Tzankov blvd., Sofia1040, Bulgaria

出　　处：《通讯和计算机（中英文版）》2017年第1期39-45,共7页Journal of Communication and Computer

关 键 词：深亚微米技术 电流放大器 特性 短沟道效应 频率带宽 FET 长度 信道 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN722.73