Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs  

作　　者：樊双 胡志远 张正选 宁冰旭 毕大炜 戴丽华 张梦映 张乐情 

机构地区：[1]The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [2]Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Chinese Physics B》2017年第3期388-394,共7页中国物理B（英文版）

基　　金：Project supported by Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)

摘　　要：Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling （BBT） has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide （BOX） contributes a lot to the latchup effect.Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling （BBT） has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide （BOX） contributes a lot to the latchup effect.

关 键 词：total ionizing dose （TID） single transistor latchup （STL） band-to-band tunneling （BBT） partiallydepleted silicon-on-insulator （PDSOI） 

分 类 号：TN386[电子电信—物理电子学]