Transparent conducting indium-tin-oxide(ITO) film as full front electrode in Ⅲ–Ⅴ compound solar cell  

作　　者：代盼 卢建娅 谭明 王青松 吴渊渊 季莲 边历峰 陆书龙 杨辉 

机构地区：[1]Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano- Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China

出　　处：《Chinese Physics B》2017年第3期495-499,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157);the Application Foundation of Suzhou,China(Grant No.SYG201437)

摘　　要：The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.

关 键 词：full indium-tin-oxide （ITO） electrode specific contact resistance solar cell 

分 类 号：TM914.4[电气工程—电力电子与电力传动]