Superjunction nanoscale partially narrow mesa IGBT towards superior performance  

作　　者：喻巧群 陆江 刘海南 罗家俊 李博 王立新 韩郑生 

机构地区：[1]Institute of Microelectronics of Chinese Academy of Science, Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

出　　处：《Chinese Physics B》2017年第3期582-587,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61404161)

摘　　要：We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage （Vce（sat）） and low turn-off loss （Eoff） while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce（sat） of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce（sat） and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering （CIBL） effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage （Vce（sat）） and low turn-off loss （Eoff） while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce（sat） of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce（sat） and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering （CIBL） effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.

关 键 词：insulated gate bipolar transistor （IGBT） partially narrow mesa （PNM） superjunction （S J） turn-offloss 

分 类 号：TN322.8[电子电信—物理电子学]