Effective electromechanical coupling coefficient of high-overtone bulk acoustic resonator  

作　　者：LI Jian WANG Chenghao LIU Mengwei 

机构地区：[1]Institute of Acoustics,Chinese Academy of Sciences Beijing 100190

出　　处：《Chinese Journal of Acoustics》2017年第1期1-17,共17页声学学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(11374327)

摘　　要：A high-overtone bulk acoustic resonator （HBAR） is composed of a substrate, a piezoelectric film and upper and lower electrodes, the influences of their structure parameter （thickness） and performance parameter （characteristic impedance） on effective electromechani- cal coupling coefficient K^2eff are investigated systematically. The relationship between K^2eff and these parameters is obtained by a lumped parameter equivalent circuit instead of distributed parameter equivalent circuit near the resonant frequency, and K^2eff at the resonance frequency closest to the given frequency is analyzed. The results show that K^2eff declines rapidly and oscillatorily with the continuous increase of the substrate thickness when the piezoelectric film thickness is fixed, and decreases inversely proportion to the thickness when the substrate thick-ness is greater than a certain value. With the ratio of the characteristic impedance of the substrate to the piezoelectric layer increasing, the maximum of K^2eff obtained from the vari- ation curve of K^2eff with the continuous increase of the piezoelectric film thickness decreases rapidly before reaching the minimum value, and later increases slowly. Fused silica with low impedance is appropriate as the substrate of HBAR to get a larger K^2eff. Compared with Al electrode, Au electrode can obtain larger K^2eff when the appropriate electrode thickness is selected. The revealed laws above mentioned provide the theoretical basis for optimizing parameters of HBAR.A high-overtone bulk acoustic resonator （HBAR） is composed of a substrate, a piezoelectric film and upper and lower electrodes, the influences of their structure parameter （thickness） and performance parameter （characteristic impedance） on effective electromechani- cal coupling coefficient K^2eff are investigated systematically. The relationship between K^2eff and these parameters is obtained by a lumped parameter equivalent circuit instead of distributed parameter equivalent circuit near the resonant frequency, and K^2eff at the resonance frequency closest to the given frequency is analyzed. The results show that K^2eff declines rapidly and oscillatorily with the continuous increase of the substrate thickness when the piezoelectric film thickness is fixed, and decreases inversely proportion to the thickness when the substrate thick-ness is greater than a certain value. With the ratio of the characteristic impedance of the substrate to the piezoelectric layer increasing, the maximum of K^2eff obtained from the vari- ation curve of K^2eff with the continuous increase of the piezoelectric film thickness decreases rapidly before reaching the minimum value, and later increases slowly. Fused silica with low impedance is appropriate as the substrate of HBAR to get a larger K^2eff. Compared with Al electrode, Au electrode can obtain larger K^2eff when the appropriate electrode thickness is selected. The revealed laws above mentioned provide the theoretical basis for optimizing parameters of HBAR.

关 键 词：ZnO Effective electromechanical coupling coefficient of high-overtone bulk acoustic resonator high 

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