基于光源近场模型的LED光学扩展量测量方法  

Measurement Method of LED Etendue Based on Near-field Source Model

作　　者：桂立[1,2] 尹韶云[1] 蔡文涛[1] 孙秀辉[1] 杜春雷[1] 丁学专[2] 

机构地区：[1]中国科学院重庆绿色智能技术研究院集成光电技术研究中心,重庆400714 [2]中国科学院上海技术物理研究所红外探测与成像技术重点实验室,上海200083

出　　处：《光子学报》2017年第1期176-181,共6页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.61475199;61275061);国家高技术研究发展计划(No.2014AA123202)资助~~

摘　　要：基于精确的LED光源近场模型,提出了一种LED光学扩展量测量方法.通过追迹LED近场光源模型中的光线数据,可获得LED光功率关于光学扩展量的关系曲线,直观反映出LED光源的光学扩展量特性和光能利用率等信息.以紫外曝光系统中的UV-LED阵列面光源为例,对三款不同型号的UV-LED进行了实际测量.通过测量得到的光学扩展量和光能利用率曲线,可以对UV-LED的光束质量作出判断,并为阵列面光源的优化设计提供帮助.A method for measuring the etendue of LED was proposed based on the near-field model of the LED source.The curve of luminous power on etendue can be obtained by tracing rays data in LED near-field moled, which can directly reflect the etendue characteristics and the energy efficieny of LED source.Taking the UV-LED array surface source in the exposure system as an example, the actual measurement of the three different models of UV-LED were carried out.The designer can make a judgment on the UV-LED beam quality by the etendue and energy efficiency curve, which can provide help for the optimization design of the UV-LED array surface source.

关 键 词：非成像光学 光学扩展量 光源近场 发光二极管 光学设计 

分 类 号：O432.2[机械工程—光学工程]