850nm垂直腔面发射激光器结构优化与制备  

Structural Optimization and Fabrication of 850 nm Vertical-Cavity Surface-Emitting Laser

作　　者：冯源[1] 郝永芹[1] 王宪涛[1] 刘国军[1] 晏长岭[1] 张家斌[1] 李再金[1] 李洋[1] 

机构地区：[1]长春理工大学高功率半导体激光国防科技国家重点实验室,吉林长春130022

出　　处：《中国激光》2017年第3期41-48,共8页Chinese Journal of Lasers

基　　金：国家自然科学基金(11474038;61376045);长春理工大学基金(XJJLG-2015-10)

摘　　要：根据分布布拉格反射镜(DBR)的工作原理,优化量子阱(QW)和DBR结构,采用Crosslight计算机模拟软件模拟了垂直腔面发射半导体激光器(VCSEL)的反射谱和QW增益谱,确定QW组分、厚度以及DBR的对数。采用分子束外延技术外延生长并制备了850nm顶发射VCSEL。测试结果表明,阱宽为5nm的In_(0.075)Ga_(0.925)As/Al_(0.35)Ga_(0.65)As QW,在室温下激射波长在840nm左右,设计的顶发射VCSEL结构通过Ocean Optics Spectra Suite软件验证,得到室温下的光谱中心波长在850nm附近,证实了结构设计的正确性。According to the principle of distributed Bragg reflector （DBR）, the quantum well （QW） and DBR structures are optimized. By employing Crosslight computer simulation software, the reflectance spectrum and the QW gain spectrum of vertical cavity surface emitting laser （VCSEL） are simulated, and the QW composition, width and pairs of the DBR are determined. The high quality epitaxial wafers of 850 nm top-emitting VCSEL are grown by the molecular beam epitaxy technology and processed into devices. The experimental results indicate that the lasing wavelength from the In0.07s Ga0.925 As/Al0.35 Ga0.65 As QW structure with well width of 5 nm is approximately 840 nm at room temperature, and the theoretical results obtained by Ocean Optics Spectra Suite software show that the central wavelength of the spectrum is near to 850 nm at room temperature. The results verify the correctness of the design.

关 键 词：激光器 垂直腔面发射激光器 量子阱 分布布拉格反射镜 反射率 850nm 

分 类 号：TN248.4[电子电信—物理电子学]