Al掺杂对Ti_3SiC_2陶瓷制备和性能的影响  

Influence of Al Doping on the Preparation and Properties of Ti_3SiC_2 Ceramics

作　　者：李智敏[1] 张茂林[1] 闫养希 黄云霞[1] 罗发[2] 庞锦标 

机构地区：[1]西安电子科技大学,陕西西安710071 [2]西北工业大学凝固技术国家重点实验室,陕西西安710072 [3]中国振华集团云科电子有限公司,贵州贵阳550018

出　　处：《稀有金属材料与工程》2017年第2期468-472,共5页Rare Metal Materials and Engineering

基　　金：陕西省自然科学基础研究计划(2015JQ6252);高等学校博士学科点专项科研基金(20130203120016);宁波市自然科学基金(2015A610037;2015A610109;2016A610029)

摘　　要：采用热压烧结法制备了Al掺杂的Ti_3SiC_2陶瓷,通过X射线衍射仪、扫描电子显微镜、能谱仪、矢量网络分析仪等,分别对所制备的样品进行了表征和抗氧化性能、微波介电性能测试。结果表明:所制备的Al掺杂陶瓷具有相当高的Ti_3SiC_2质量分数,陶瓷晶粒呈现明显的层状特征。相比于未掺杂样品,通过Al掺杂途径,可显著提高Ti_3SiC_2陶瓷1200℃高温下的抗氧化性能,并使Ti_3SiC_2陶瓷的介电常数实部ε'和虚部ε'值大幅度增加,其在8.2~12.4 GHz频率范围的均值分别为60.8和6.28。Al-doped Ti3SiC2 ceramics were prepared by hot-pressing sintering, and the phase composition, microstructure, oxidation resistance and microwave dielectric properties of the prepared samples were characterized by X-ray diffractometer, scanning electron microscope, energy dispersive spectroscopy and vector network analyzer, respectively. Results show that the prepared ceramic with Al doping has higher mass fraction of Ti3SiC2, and the as-prepared ceramic grains present a typical laminated appearance. Through the Al doping approach, the oxidation resistance of Ti3SiC2 ceramic at 1200 ℃ is significantly improved, and its real component ε＇ and imaginary component ε＂ of permittivity are greatly increased, which are 60.8 and 6.28 in average in the frequency range of 8.2-12.4 GHz, respectively.

关 键 词：Ti3SiC2陶瓷 AL掺杂 热压烧结 抗氧化性能 微波介电性能 

分 类 号：TQ174.1[化学工程—陶瓷工业]