V_2O_5掺杂对ZnO–Pr_6O_(11)基压敏电阻微观结构和电学性能的影响  

Microstructure and Electrical Properties of V_2O_5-doped ZnO–Pr_6O_(11) Ceramics

作　　者：刘建科[1] 崔永宏[1] 陈永佳[2] 韩晨[2] 范亚红[1] 

机构地区：[1]陕西科技大学文理学院,西安710021 [2]陕西科技大学电气与信息工程学院,西安710021

出　　处：《硅酸盐学报》2017年第3期360-365,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51272145;50972087)资助

摘　　要：研究了V_2O_5掺杂对ZnO–Pr_6O_(11)基压敏电阻微观结构、电性能的影响。研究表明:随着V_2O_5掺杂量的增加,击穿场强(E_(1mA))从1 068 V/mm增加到1 099 V/mm,后又减小到937 V/mm。当V_2O掺杂量(摩尔分数)为1.0%时,击穿场强达到最高,阻抗最大,相对介电常数ε_r出现最大值,损耗角正切值tanδ达到最小;当V_2O_5掺杂量(摩尔分数)为1.5%时,非线性系数(α)达到最大(47.7),漏电流(JL)降到最小(0.74μA/cm2)。V_2O_5的存在对压敏电阻的性能有显著影响,呈现出优越的性能,特别是击穿电压很高,在电气设备的抗雷击方面具有应用潜能。The microstructure and electrical properties of V2O5-doped ZnO-Pr6O11 ceramics were investigated. As the amount of V2O5 increases, the breakdown field firstly increases from 1 068 to 1 099 V/mm, and then decreases to 937 V/mm. The varistor ceramics doped with the amount V2O5 of 1.0% （mole fraction） exhibit the optimum breakdown field, impedance and relative dielectric constant, as well as the minimum loss tangent value （tang）. The varistor ceramics doped with the of V2O5 amount of 1.5% show the optimum nonlinear coefficient （α） of 47.7, and the least leakage current （JL） of 0.74 μA/cm2. The results indicate that V2O5 doping has a dominant effect on the performance, the ceramics presents the superior performance, especially at the high breakdown voltage. The ceramics have a promising application potential in the electrical equipment resistant to lightning.

关 键 词：五氧化二钒掺杂 氧化锌压敏电阻 微观结构 电学性能 

分 类 号：TQ174.9[化学工程—陶瓷工业]