Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAsxSb1-x Buffer Layers  

作　　者：于海龙 吴皓越 朱海军 宋国峰 徐云 

机构地区：[1]Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

出　　处：《Chinese Physics Letters》2017年第1期125-128,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2015CB351902,2015CB932402 and 2012CB619203;the National Natural Science Foundation of China under Grant Nos 61177070,11374295 and U1431231;the National Key Research Program of China under Grant No 2011ZX01015-001

摘　　要：We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAsxSb1-x buffer layers. Optimization of GaAsxSb1-x growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAsxSb1-x layers are found to be 420 degrees C and 0.5 mu m, respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67nm over 2 x 2 mu m(2) area are achieved as a 250nm GaSb film is grown under optimized conditions.We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAsxSb1-x buffer layers. Optimization of GaAsxSb1-x growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAsxSb1-x layers are found to be 420 degrees C and 0.5 mu m, respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67nm over 2 x 2 mu m(2) area are achieved as a 250nm GaSb film is grown under optimized conditions.

关 键 词：Buffer Layers LT 

分 类 号：O484[理学—固体物理]