Cr对离子辐照后Fe-8Cr中的位错环的影响  

The effect of Cr on the dislocation loops in Fe-8Cr alloy induced by irradiation

作　　者：姜少宁[1] 万发荣[2] 王晓丽[1] 大貫惣明[2] JIANG Shaoning WAN Farong WANG Xiaoli Ohnuki Somei(School of Mechanical ＆ Automotive Engineering, Qilu University of Technology, Ji＇nan 250353, China School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China)

机构地区：[1]齐鲁工业大学机械与汽车工程学院,济南250353 [2]北京科技大学材料科学与工程学院,北京100083

出　　处：《功能材料》2017年第3期3108-3112,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51501097);山东省自然科学基金资助项目(ZR2014EMP005);山东省优秀中青年科学家科研奖励基金资助项目(2014BSB01674)

摘　　要：低活化铁素体/马氏体钢是第四代裂变堆和未来聚变堆的候选结构材料,其主要成分为Fe-8Cr合金。为了研究其辐照行为,对Fe-Cr二元合金辐照后产生的位错环进行了分析。在室温下对纯Fe和Fe-8Cr注入氦离子,随后在超高压透射电子显微镜中时效(773K/1h),并在773K进行电子束辐照并进行原位观察。结果发现,室温注氦后两种样品中产生的缺陷在773K聚集成间隙型位错环,这些位错环在随后的电子束辐照下不断长大。纯铁和Fe-8Cr中的位错环在电子束辐照下的长大速率近乎相同,但Fe-8Cr中位错环的密度比纯铁高一个数量级,而其尺寸比纯铁中的小的多。分析表明,辐照过程中Fe-8Cr中Cr团簇的富集阻止了位错环的移动。Dislocation loops induced by irradiation for Fe-8Cr alloy were analysed to study the irradiation behavior.Pure Fe and Fe-8Cr alloy were implanted by helium at room temperature,respectively.Then they were aged at 773 Kfor 1hat High Voltage Electron Microscope（HVEM）.Finally,they were irradiated electron beam at773 Kand in-situ observed by HVEM.The results show that,the defects induced by helium implatation at room temperature were aggregated to interstitial loops at 773 K,which were grown up followed by electron beam irradiation at 773 K.The growth rates of dislocation loops in both samples are almost the same.However,the density of dislocation loops in Fe-8Cr alloy is an order of magnitude higher than that in pure iron,meanwhile,the size of dislocation loops in Fe-8Cr alloy is much smaller than that in pure iron.The analysis indicates that the enrichment of Cr-cluster prevents the moving dislocation loops.

关 键 词：氦离子 电子束 辐照损伤 位错环 Cr团簇 

分 类 号：TG139.8[一般工业技术—材料科学与工程]