烧结温度对Nb_2O_5掺杂TiO_2靶材性能的影响  

Sintering temperature on the properties of Nb_2O_5 doped TiO_2 target

作　　者：朱佐祥 彭伟[1] 尚福亮[1] 高玲[1] 杨海涛[1] ZHU Zuoxiang PENG Wei SHANG Fuliang GAO Ling YANG Haitao(Key Laboratory of Functional Materials of Shenzhen, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China)

机构地区：[1]深圳大学深圳功能材料重点实验室深圳先进技术工程陶瓷实验室材料科学与工程学院,广东深圳518060

出　　处：《功能材料》2017年第3期3223-3226,3231,共5页Journal of Functional Materials

基　　金：深圳市基础研究资助项目(JCYJ2016 0422 1447 51573;JCYJ2016 0422 1049 21235;JCYJ2014 0418 1819 58489)

摘　　要：采用真空烧结方法制备了Nb_2O_5∶TiO_2(NTO)的陶瓷靶材,研究了在7.5%(质量分数)掺杂量下不同烧结温度对NTO陶瓷靶材的微观结构、表面形貌、电学性能、致密度和抗弯强度的影响。通过对NTO靶材的各项性能进行了表征分析表征,实验结果表明,当烧结温度在1 150℃,掺杂量在7.5%(质量分数)时,所制备的陶瓷靶材各项性能最优,其各项性能指标均表现良好,其电阻率为3.420mΩ·cm,抗弯强度为129.24 MPa,其致密度为94.30%。表明此时所制备的NTO陶瓷靶材更加适合于实际工业应用。Nb-doped TiO2（NTO）ceramic targets were prepared by vacuum sintering process.The effects of sintering temperatures on the crystal structure,fracture surface morphology,mechanical and electrical properties,densification behavior and bending strength of the sintered NTO ceramic targets with doping amount of 7.5wt%Nb2O5 were investigated.The optimum sintering temperature was considered as 1 150℃.The results indicated that NTO targets with doping amount of 7.5wt%Nb2O5sintered at 1 150℃had the best properties combination,which was corresponding to an resistivity of 3.420mΩ·cm,a bending strength of 129.24MPa,a relative density of 94.30%.This kind of NTO ceramic has a potential to be used as a high-quality sputtering target.

关 键 词：靶材 掺杂 烧结温度 透明导电薄膜 

分 类 号：TF125[冶金工程—粉末冶金] TM283[冶金工程—冶金物理化学]