百万像素级红外焦平面器件倒装互连工艺研究  

Research on flip chip bonding technology for mega pixels HgCdTe infrared FPA device

作　　者：谢珩[1] 王宪谋[1] 王骏[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2017年第3期319-321,共3页Laser & Infrared

基　　金：国防基础科研计划项目(No.JCKY2016210B002)资助

摘　　要：介绍了倒装互连技术的工艺原理,阐述了红外焦平面器件倒装互连的工艺特点。通过系列实验和分析,最终优化并确定了百万像素级红外焦平面器件倒装互连的工艺参数,获得了良好的互连效果。The theory of flip chip bonding technology was introduced,and technical characteristics of flip chip bonding process for infrared FPA was expounded. The technical parameters of flip chip bonding technology for mega pixels infrared FPA device were optimized and determined through the experiments and analysis,which lay the foundation for the development of infrared FPA detector

关 键 词：倒装互连 百万像素 碲镉汞 红外焦平面 

分 类 号：TN214[电子电信—物理电子学]