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作 者:Eric Belhaire Regis Pichon
机构地区:[1]Thales Optronique SAS, 2 avenue Gay-Lussac, Elaneourt 78995, France
出 处:《应用光学》2017年第2期298-303,共6页Journal of Applied Optics
摘 要:Standard GaAs/AlGaAs quantum well infrared photodetectors(QWIP)have been seriously considered as atechnological choice for the 3^(rd) generation of thermal imagers in the long wave infrared band(LWIR)for some time.Alternative technology like MCT(HgCdTe)was the technology choice of the 2^(nd) generation because of its high quantum efficiency.In the paper,measurements on the QWIP technology will be presented and a comparison with alternative technology will be done.Standard GaAs/AlGaAs quantum well infrared photodetectors (QWIP) have been seriously considered as atechnological choice for the 3rd generation of thermal imagers in the long wave infrared band (LWIR) for some time. Alternative technology like MCT (HgCdTe) was the technology choice of the 2nd generation because of its high quantum efficiency. In the paper, measurements on the QWIP technology will be presented and a comparison with alternative technology will be done.
关 键 词:infrared detectors image sensors quantum well infrared photodetectors(QWIP)
分 类 号:TN214[电子电信—物理电子学]
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