基于FPGA控制的高速大容量NAND FLASH存储模块设计  

Design of nandflash memory module with high speed and large capacity based on FPGA

作　　者：彭卓文 杨新民[1] 王胜红 

机构地区：[1]南京理工大学,江苏南京210094 [2]淮海工业集团,山西长治046000

出　　处：《电子设计工程》2017年第7期111-114,118,共5页Electronic Design Engineering

摘　　要：为了实现对于炮弹弹道测试系统采集数据实时存储,本文设计了一种存储模块。该模块由XILINX公司的XC3S1600E和意法半导体公司的NAND512W3A构成,通过对FPGA进行硬件编程实现对NANDFLASH的读写控制^([1])。针对NANDFLASH存在坏块的缺点,提出了相应的管理方法,保证了数据的可靠性。通过实时更新并存储NAND FLASH操作地址来保证存储模块重新上电之后可以继续存储。In order to achieve the storage of Ballistic test system＇s real-time data, this article designs a storage module. The module consists of XILINX XC3S1600E and STMicroelectronics NANDS12W3A, which controls the read＆white operation of NANDFLASH by programing the FPGA.Aiming at the problems that NANDFLASH contains bad block,this paper proposes for a corresponding management measure and secures its data＇s reliability.As well,the memory module could continue work when it is reenergized though updating and saving the operation address in real time.

关 键 词：FPGA NANDFLASH 大容量存储 坏块管理 

分 类 号：TN98[电子电信—信息与通信工程]