铁酸铋薄膜的电学特性及掺杂影响分析  

Electrical property and doping effect of BiFeO_3 thin film

作　　者：罗劲明[1] 张海宁[1] 温建平[1] 

机构地区：[1]嘉应学院物理与光信息科技学院,梅州514015

出　　处：《化工新型材料》2017年第3期207-209,共3页New Chemical Materials

基　　金：广东省自然科学基金博士科研启动项目(2014A030310410)

摘　　要：利用溶胶-凝胶法在氧化铟锡(ITO)衬底上制备了多铁性铁酸铋薄膜,发现这种方法制备的薄膜具有典型的钙钛矿晶体结构,并表现出较好的介电性能。薄膜的漏电和铁电性能测试表明由于漏电流比较大,薄膜在室温下表现出不饱和的电滞回线,难以精确获得剩余极化强度值。而在外加扫描电压或电流时,薄膜均呈现出明显的阻变效应,可应用于阻变信息存储。最后,分析讨论了元素掺杂对薄膜铁电性能和阻变效应的影响。BiFeO3 thin films were fabricated by chemical solution deposition on ITO substrates,which demonstrated a typical perovskite crystal structure and exhibiting agood dielectric property.However,the ferroelectric hysteresis loops were found to be not saturated due to the large leakage current,and no accurate remanent polarization can be attained.Moreover,when applying pulse voltage or pulse current,a stable resistive switching characteristic for resistive memory device application can be found.In addition,the role of doping effect on ferroelectricity and resistive switching of BFO was also discussed.

关 键 词：铁酸铋 铁电性能 阻变效应 掺杂 

分 类 号：TB383.2[一般工业技术—材料科学与工程]