InGaAs/AlGaAs量子阱红外探测器中势垒生长温度的研究  

Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector

作　　者：霍大云 石震武 张伟[1] 唐沈立 彭长四[1] 

机构地区：[1]苏州大学光电信息科学与工程学院/苏州纳米科技协同创新中心,苏州215006

出　　处：《物理学报》2017年第6期334-340,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11504251);江苏高校优势学科建设工程;科技部国际合作项目(批准号:2013DFG12210);江苏省高校自然科学研究重大项目(批准号:12 KJA140001);江苏省普通高校研究生科研创新计划(批准号:KYLX15_1252)资助的课题~~

摘　　要：InGaAs/AlGaAs量子阱是中波量子阱红外探测器件最常用的材料体系,本文以结构为2.4 nm In_(0.35)Ga_(0.65)As/40 nm Al_(0.34)Ga_(0.66)As的多量子阱材料为研究对象,利用分子束外延生长,固定InGaAs势阱的生长温度(465°C),然后依次升高分别选取465,500,545,580°C生长AlGaAs势垒层,从而获得四个不同的多量子阱样品.通过荧光光谱以及X射线衍射测试系统分析了势垒层生长温度对InGaAs量子阱发光和质量的影响,并较准确地给出了量子阱大致的温致弛豫轨迹:465—500°C,开始出现相分离,但缺陷水平较低,属弹性弛豫阶段;500—545°C,相分离加剧并伴随缺陷水平的上升,属弹性弛豫向塑性弛豫过渡阶段;545—580°C,相分离以及缺陷水平急剧上升,迅速进入塑性弛豫阶段,尤其是580°C时,量子阱的材料质量被严重破坏.The InGaAs/AlGaAs quantum wells have been extensively applied to quantum well infrared photodetector of midwavelength.In this letter,four samples of 2.4 nm In0.35Ga0.65As/40 nm Al0.34Ga0.66 As multi-quantum wells are grown by molecular beam epitaxy with the InGaAs wells growing all at a temperature of 465℃ but the AlGaAs wells growing at temperatures of 465℃,500℃,545℃,and 580℃ respectively.The dependence of InGaAs quantum well strain relaxation on the AlGaAs growth temperature is systematically studied by photoluminescence spectroscopy and X-ray diffraction and then the thermal-induced relaxations of three key-stages are clearly observed in the following temperature ranges.1） 465–500℃ for the stage of elastic relaxation： the phase separation begins to take place with a low defect density; 2） 500–545℃ for the transition stage from elastic relaxation to plastic relaxation： the phase separation will be further intensified with defect density increasing; 3） 545–580℃ for the fast stage dominated by elastic relaxation and the defect density will sharply increase.Especially when Al Ga As temperature increases to 580℃,a very serious plastic relaxation will take place and the In Ga As quantum well will be dramatically destroyed.

关 键 词：中波红外探测 量子阱红外探测器件 InGaAs/AlGaAs多量子阱 温致弛豫 

分 类 号：TN215[电子电信—物理电子学]