快速热退火对Au/AuBe/Au与GaP结构的影响  

Influence of Rapid Thermal Annealing on the Au/Au Be/Au and GaP Structure

作　　者：肖和平 王宇 郭冠军 马祥柱 张双翔 

机构地区：[1]扬州乾照光电有限公司,江苏扬州225101

出　　处：《半导体技术》2017年第4期293-299,共7页Semiconductor Technology

摘　　要：采用金属有机化学气相沉积(MOCVD)制备了GaAs基AlGaInP发光二极管(LED),其中在p-GaP上制作Au/AuBe/Au接触电极,经不同温度快速热退火后,使用扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)和俄歇电子能谱仪(AES)对样品的欧姆接触的界面特性进行了分析和表征。使用光电测试仪对样品的电性能进行了测试。结果表明,随着退火温度的升高,各元素的扩散深度和强度增加,Au表面出现灰色片状聚合物,其主要成分为AuGa和BeO;在490~550℃时,金属层与GaP界面表层Au中含有Ga和Be元素,Ga P中含有Au和Be元素;Ga元素扩散至Au层中,Au3Be相分解并形成β-AuGa,金属层物相结构转变成Au与β-AuGa两相的混合。在490~550℃时LED的正向电压保持不变。Ga As-based AlGaInP light-emitting diodes（LED） were prepared by the metal organic chemical vapor deposition（MOCVD）.The Au/AuBe/Au contact electrodes were fabricated on the pGaP.After rapid thermal annealing at different temperatures,the interfacial properties of the ohmic contact of the samples were analyzed and characterized by the scanning electron microscope（SEM）,X-ray photoelectron spectrometer（XPS） and Auger electron spectrometer（AES）.The electrical properties of the samples were tested by using the photoelectric tester.The results show that with the increase of the annealing temperature,the diffusion depth and intensity of each element increase,and some gray flake polymers whose main components are AuGa and BeO appear on the Au surface.At 490-550 ℃,the Ga and Be elements are contained in the surface of the Au layer,and the Au and Be elements are contained in the Ga P.The Ga element diffuses into the Au layer,Au3 Be phase decomposes and forms into β-Au Ga,and the phase structure of the metal layer is transformed into the two-phase mixture of Au and β-Au Ga.The forward voltage of the LED remains unchanged at 490-550 ℃.

关 键 词：热退火处理 AES纵深分析 元素扩散 物相结构 接触电极 

分 类 号：TN305[电子电信—物理电子学]