基于动力学标度法的a-C:H薄膜表面微观形貌的演变机理研究  

Study of a-C:H Thin Film Surface Morphology Evolution Mechanism Based on Dynamic Scaling

作　　者：张玲[1] 陈果[1] 何小珊[1] 艾星[1] 何智兵[1] 刘磊[1] 唐永建[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《原子能科学技术》2017年第4期740-746,共7页Atomic Energy Science and Technology

摘　　要：采用等离子体增强化学气相沉积(PECVD)方法在Si(111)基底上制备a-C:H薄膜,利用原子力显微镜(AFM)和扫描电子显微镜(SEM)对a-C:H薄膜的表面形貌与表面粗糙度进行表征,并从动力学标度法角度出发讨论a-C:H薄膜表面粗糙度的演变机理。研究结果表明:a-C:H薄膜表面微观形貌为自仿射分形表面,可用分形维数来评价薄膜的表面粗糙度;随着H_2流量的增加,薄膜表面粗糙度先减小后增大,在T_2B与H_2流量比为0.2/6时,a-C:H薄膜的表面粗糙度R_q为2.2nm,相对于其他条件下生长的薄膜的表面粗糙度低,薄膜表面较光滑,致密性良好。The a-C：H thin films were successfully fabricated on Si（lll） substrates by plasma enhanced chemical vapor deposition （PECVD）. The surface morphology of thin films was studied by atomic force microscopy （AFM） and scanning electron microscope （SEM）. From the perspective of dynamic scaling, the evolution mechanism of the surface roughness for the a-C：H thin films was investigated. The results show that the surface morphology of a-C： H thin films is according to a kind of self affine fractal sur- face, and the surface roughness of thin films can be described by the fractal dimension. With the increasing of the flow of H2, the surface roughness decreases firstly and then increases. When the flow ratio of T2B and H2 is 0.2/6, the surface roughness reaches the minimum of 2.2 nm, and the surface grain is in uniform and regular arrangement without crack.

关 键 词：a-C:H薄膜 表面粗糙度 分形维数 原子力显微镜 扫描电子显微镜 

分 类 号：O55[理学—热学与物质分子运动论]