铜纳米线阵列显微结构的表征和控制  

Characteristic and controlling to the microstructure of Cu nanowire arrays

作　　者：牛高[1] 谭秀兰[1] 韩尚君[1] 罗江山[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《功能材料》2011年第S4期659-661,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10804101);等离子体物理国防科技重点实验室基金资助项目(9140C6805021008)

摘　　要：采用多孔氧化铝(AAO)模板脉冲电沉积法制备了强辐射源用铜纳米线阵列材料,并用扫描电子显微镜(SEM)、能谱(EDS)和X射线衍射(XRD)对其进行了结构表征。结果表明电沉积的峰值电流强度和辅助阴极可以影响铜纳米线的表面质量、长度分布均匀性和微区长度起伏。减小峰值电流强度,可以明显改善单根铜纳米线的表面质量,但是对铜纳米线阵列长度分布均匀性和微区长度起伏影响程度有限。添加辅助阴极,不仅可以改善单根铜纳米线的表面质量,还可以显著提高铜纳米线阵列长度分布均匀性,并改善其微区长度起伏情况。Cu nanowire arrays has been fabricated within the pores of an anodic aluminum oxide(AAO) template by pulsed electrodeposition,and it has been characterized by scan electron microscopy(SEM),energy-dispersive X-ray spectroscopy(EDS) and X-ray diffraction(XRD).It was found that the peak value of pulse current and the assistant cathode are important factors to the surface quality of a Cu nanowire,the uniformty of length distribution of Cu nanowires and the length wave in a tiny area.To reduce the peak value of pulse current can improve the surface quality of a Cu nanowire,but it is not evident to improve the uniformty of length distribution of Cu nanowires and the length wave in a tiny area.To append an assistant cathode can improve the surface quality of a Cu nanowire,and it is evident to improve the uniformty of length distribution of Cu nanowires and the length wave in a tiny area.

关 键 词：显微结构 铜纳米线阵列 电沉积 阳极氧化铝 

分 类 号：TB383.1[一般工业技术—材料科学与工程]