钡钨扩散阴极中毒特性综述  

Review of Poisoning Characteristic of Ba-W Dispenser Cathode

作　　者：于志强[1] 高玉娟[1] 邵文生[1] 李季[1] 张珂[1] 

机构地区：[1]北京真空电子技术研究所微波电真空器件国家级重点试验室,北京100015

出　　处：《真空电子技术》2017年第1期22-27,共6页Vacuum Electronics

摘　　要：钡钨扩散阴极,尤其是是覆膜钡钨阴极,因为其出色的热电子发射能力以及良好的抗中毒能力,是当前大功率微波器件中应用最为广泛的热电子源。而阴极中毒,即非预期的阴极发射能力降低的现象是微波管生产与使用过程中出现概率最高的可靠性问题。本文主要就普通钡钨阴极及覆膜钡钨阴极的中毒表现进行介绍,并分析其过程,探讨中毒机理。Ba-W dispenser cathodes, especially the coated Ba-W cathodes were widely used in high power microwave devices because of their high current density and recovery performance after poisoning. However, the cathode poisoning, or the insufficient emission in devices, is one major reliability problem of microwave tubes. This research reviews the poisoning phenomena of Ba-W dispenser cathode, discusses the electron emission mechanism, and analyses the poisoning mechanism.

关 键 词：扩散阴极 阴极中毒 

分 类 号：TN103[电子电信—物理电子学]