双芯GCT局部少子寿命控制方法的研究  

Study on Local Minority Carrier Lifetime Control Method of Dual-GCT

作　　者：王彩琳[1] 刘雯娇[1] 杨晶[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,西安710048

出　　处：《固体电子学研究与进展》2016年第1期45-49,共5页Research & Progress of SSE

基　　金：国家自然基金资助项目(No.51077110;51477137);陕西省工业攻关资助项目(No.2014K06-21)

摘　　要：双芯GCT(Dual-GCT)是一种基于传统的非对称GCT提出的一种新型电力半导体器件,同时拥有很低的导通损耗和关断损耗。少子寿命是双芯GCT的关键参数,对其静、动态特性有重要的影响。采用ISE-TCAD软件分析了局部寿命控制对波状基区双芯GCT(CP Dual-GCT)特性的影响,结果表明,通过局部电子辐照和质子辐照实现的局部寿命控制可以改善波状基区双芯GCT的综合特性,降低其损耗。Dual-GCT is a new power semiconductor device based on traditional asymmetric GCT,which has low conduction loss and switching loss simultaneously.Minority carrier lifetime is an important parameter of Dual-GCT,which has a significant impact on its static and dynamic characteristics.In this paper,the influences of local lifetime control on the characteristics of CP Dual-GCT was studied by ISE-TCAD simulator.The results showed that the local lifetime control achieved by local electron and proton irradiations could improve the characteristics and decrease the loss of CP Dual-GCT.

关 键 词：门极换流晶闸管 双芯 寿命控制 辐照 

分 类 号：TN34[电子电信—物理电子学]