压接式IGBT芯片的研制  

The Research on IGBT Chip for Press-pack

作　　者：高明超 韩荣刚 赵哿 刘江 王耀华 李立 李晓平 乔庆楠 金锐 温家良 

机构地区：[1]国网智能电网研究院电工新材料及微电子研究所,北京100192

出　　处：《固体电子学研究与进展》2016年第1期50-53,共4页Research & Progress of SSE

基　　金：国家电网公司科技项目<2500V/600A压接式IGBT模块关键技术研究>(SGRI-WD-71-13-006)

摘　　要：基于现有工艺平台开发了一款具有自主知识产权的3 300V/50A非穿通型(NPT)压接式IGBT芯片。该芯片元胞采用平面型结构,元胞注入采用自对准工艺,背发射极采用透明集电极技术。为适用于压接封装,避免压力对MOS沟道的影响,在有源区淀积第二层厚金属铝,并在JFET区上方用场氧垫高。终端采用场环+多级场板复合结构,结合横向的场终止技术,实现高效率的终端结构设计。将此设计进行流片验证,测试结果显示击穿电压4 200V以上,饱和压降3.75V,阈值电压7.1V,实测值和仿真值相差不大。将压接式芯片封装成3 300V/600A压接式模块,饱和压降较芯片级偏小0.05V。A 3 300V/50 A Non Punch Through Insulator Gate Bipolar Transistor(NPT-IGBT)for press-pack was designed by process simulation based on the existing technology platform,which had an internal transparent collector and a planner cell structure using the self-alignment process for cell injection.In order to avoid the influence of pressure on the MOS channel,the second thick metal Aluminum was deposited on the positive electrode,and the field oxide was deposited on the JFET areas.A guard ring and multi-plate edge termination structure combined with the lateral field-stop technique was designed to improve the terminal efficiency.The test results show that the breakdown voltage is more than 4 200 V,the saturation voltage is 3.75 V,and the threshold voltage is 7.1V,which are all similar to the simulation results.The saturation voltage of the 3 300V/600Apress-pack IGBT module is 0.05 Vlower than the IGBT chip.

关 键 词：绝缘栅双极晶体管 元胞 终端 压接封装 

分 类 号：TN322.8[电子电信—物理电子学]