大口径倍频晶体高精度温控装置的研制  

Development of high precision temperature control device for large aperture frequency doubling crystal

作　　者：刘保麟 张鹏[1] 孙付仲[1] 张庆春[1] 卢礼华[1] 

机构地区：[1]哈尔滨工业大学机电工程学院,黑龙江哈尔滨150001

出　　处：《红外与激光工程》2017年第4期104-110,共7页Infrared and Laser Engineering

基　　金：中央高校基本科研业务费专项资金(2014056);教育部"春晖计划"合作项目(Z2014105)

摘　　要：非临界相位匹配条件下,为保证大口径倍频晶体具有较高的温度稳定性与一致性,在全口径范围内实现最优的倍频转换效率,设计了一种采用电加热方法进行高精度温度控制的装置。在装置设计中,充分考虑倍频晶体导热系数小、形状薄而大的特点,通过热传导加热倍频晶体,并同时加热装置其他部分,形成自然对流,均衡晶体温度。通过仿真和实验得到该装置温度分布的整体规律,得到在不同加热长度下,晶体稳定温度及稳定所需时长随晶体材料导热系数变化的规律。实验和仿真均表明:该装置能加热Φ80 mm口径的倍频晶体至目标温度,并将其温度一致性控制在±0.15°C范围内。In noncritical phase matching condition, it is necessary to precisely control the stability and uniformity of the crystal temperature in full aperture. A device using resistive heater to control the temperature of the large aperture crystal was introduced. Taking full account of the low thermal conductivity and large aperture of the crystal, it was heated by thermal conduction and the natural convection of the inner air, which was heated up at the same time for temperature balancing. The characteristics of temperature distribution of the device were studied. Through experiments and simulations analysis, it was found that the crystal temperature of steady state and the necessary heating time varied with the heating length and the thermal conductivity of the crystal material. The result shows the practicability of the thermal control of the crystal with the aperture of ±80 mm. The temperature difference of the crystal, in steady state, could be controlled within ±0.15℃.

关 键 词：激光器 ADP晶体 温度控制 非临界相位匹配 惯性约束聚变 

分 类 号：TN248.1[电子电信—物理电子学]