Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes  

作　　者：Xiaohui Yi Zhiwei Huang Guangyang Lin Cheng Li Songyan Chen Wei Huang Jun Li Jianyuan Wang 

机构地区：[1]Department of Physics,Xiamen University,Xiamen 361005,China

出　　处：《Journal of Semiconductors》2017年第4期1-5,共5页半导体学报（英文版）

基　　金：Project supported by the Key Project of Natural Science Foundation of China(No.61534005);the National Science Foundation of China(No.61474081);the National Basic Research Program of China(No.2013CB632103);the Natural Science Foundation of Fujian Province(No.2015D020);the Science and Technology Project of Xiamen City(No.3502Z20154091)

摘　　要：The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in low-temperature buffer Ge layer.It is shown that the defects in low-temperature Ge layer change the band diagrams and the distribution of electric field,leading to the increase of the total dark current for p-Ge/i-Ge/n-Si PDs,whereas these defects have no influence on the dark current for n-Ge/i-Ge/p-Ge PDs.As a complement,a three-dimensional simulation of the total current under illumination was also performed.The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in low-temperature buffer Ge layer.It is shown that the defects in low-temperature Ge layer change the band diagrams and the distribution of electric field,leading to the increase of the total dark current for p-Ge/i-Ge/n-Si PDs,whereas these defects have no influence on the dark current for n-Ge/i-Ge/p-Ge PDs.As a complement,a three-dimensional simulation of the total current under illumination was also performed.

关 键 词：germanium photodiodes defects dark current simulation 

分 类 号：TN36[电子电信—物理电子学]