A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory  

作　　者：Jiarong Guo 

机构地区：[1]School of Electronics and Information,Shanghai Dianji University,Shanghai 200240,China

出　　处：《Journal of Semiconductors》2017年第4期83-87,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Fundation of China(No.61376028)

摘　　要：A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1 V.A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current,which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier.A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted,which not only improves the sense window enhancing read precision but also saves power consumption.The sense amplifier was implemented in a flash realized in 90 run flash technology.Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125℃.A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper,capable of operating with minimum supply voltage at1 V.A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current,which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier.A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted,which not only improves the sense window enhancing read precision but also saves power consumption.The sense amplifier was implemented in a flash realized in 90 run flash technology.Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125℃.

关 键 词：flash memory sense amplifier low voltage two-stage operational amplifier current sensing 

分 类 号：TN722[电子电信—电路与系统]