A method to transfer an individual graphene flake to a target position with a precision of sub-micrometer  

作　　者：Yubing Wang Weihong Yin Qin Han Xiaohong Yang Han Ye Qianqian Lü Dongdong Yin 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Journal of Semiconductors》2017年第4期103-106,共4页半导体学报（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(No.2016YFB0402404);the High-Tech Research and Development Program of China(Nos.2013AA031401,2015AA016902,2015AA016904);the National Natural Foundation of China(Nos.61674136,61176053,61274069,61435002)

摘　　要：Graphene field-effect transistors have been intensively studied.However,in order to fabricate devices with more complicated structures,such as the integration with waveguide and other two-dimensional materials,we need to transfer the exfoliated graphene samples to a target position.Due to the small area of exfoliated graphene and its random distribution,the transfer method requires rather high precision.In this paper,we systematically study a method to selectively transfer mechanically exfoliated graphene samples to a target position with a precision of sub-micrometer.To characterize the doping level of this method,we transfer graphene flakes to pre-patterned metal electrodes,forming graphene field-effect transistors.The hole doping of graphene is calculated to be 2.16×10^12cm^-2.In addition,we fabricate a waveguide-integrated multilayer graphene photodetector to demonstrate the viability and accuracy of this method.A photocurrent as high as 0.4 μA is obtained,corresponding to a photoresponsivity of 0.48 mA/W.The device performs uniformly in nine illumination cycles.Graphene field-effect transistors have been intensively studied.However,in order to fabricate devices with more complicated structures,such as the integration with waveguide and other two-dimensional materials,we need to transfer the exfoliated graphene samples to a target position.Due to the small area of exfoliated graphene and its random distribution,the transfer method requires rather high precision.In this paper,we systematically study a method to selectively transfer mechanically exfoliated graphene samples to a target position with a precision of sub-micrometer.To characterize the doping level of this method,we transfer graphene flakes to pre-patterned metal electrodes,forming graphene field-effect transistors.The hole doping of graphene is calculated to be 2.16×10^12cm^-2.In addition,we fabricate a waveguide-integrated multilayer graphene photodetector to demonstrate the viability and accuracy of this method.A photocurrent as high as 0.4 μA is obtained,corresponding to a photoresponsivity of 0.48 mA/W.The device performs uniformly in nine illumination cycles.

关 键 词：graphene field-effect transistor flake 

分 类 号：O613.71[理学—无机化学] TN386[理学—化学]