一种SiGe BiCMOS 3级级联60GHz LNA  

A Three Stage Cascaded 60 GHz LNA in SiGe BiCMOS Technology

作　　者：王巍[1] 胡凤[1] 鲍孝圆 黄孟佳 杨皓[1] 杨正琳[1] 袁军[1] WANG Wei HU Feng BAO Xiaoyuan HUANG Mengjia YANG Hao YANG Zhenglin YUAN Jun(School of Optoelectronic Engineering/International Institute of Semiconductor, Chongqing Univ Telecommunications, Chongqing 400065, P. R. Chin)

机构地区：[1]重庆邮电大学光电工程学院/重庆国际半导体学院,重庆400065

出　　处：《微电子学》2017年第2期168-171,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61404019)

摘　　要：基于0.18μm SiGe BiCMOS工艺,设计了一种高增益单端3级级联60GHz低噪声放大器。级间匹配采用LC谐振,以减小传输损耗,引入的级间电感L与上级输出寄生电容、下级输入寄生电容谐振,以减小寄生效应的影响。在3.3V供电电压下,60GHz频率处的功率增益S_(21)达到21.8dB,噪声系数NF为6.1dB;在58~65GHz频段内,输入和输出反射系数S_(11)和S_(22)均小于-10dB。A high gain three stage cascaded and single ended 60 GHz LNA was designed in a 0.18μm SiGe BiCMOS technology. The LC resonance was used in the inter-stage matching to reduce the transmission loss. The inductor in the inter-stage resonated with the front stage＇s output parasitic capacitance and the back stage＇s input parasitic capacitance, so as to reduce the parasitic effect. At a 3.3 V voltage supply, S21 and the noise figure NF were achieved 21.8 dB and 6.1 dB respectively in operating frequency of 60 GHz. Both the input and output return loss S11 and S22 were below-10 dB from 58 GHz to 65 GHz.

关 键 词：低噪声放大器 噪声系数 60GHz 

分 类 号：TN433[电子电信—微电子学与固体电子学]