高压全膜电容器三维温度场数值计算分析  

Calculation Analysis of 3D Temperature Field Algorithm of High-voltage All-film Capacitor

作　　者：华征[1] 王召盟 徐梦蕾[1] 倪学锋[2] 林浩[2] 姜胜宝[2] 王子建[1] 徐志钮[1] 彭鹏 

机构地区：[1]华北电力大学河北省输变电设备安全防御重点实验室,河北保定071003 [2]中国电力科学研究院,湖北武汉430074 [3]国网陕西省电力公司电力科学研究院,陕西西安710054

出　　处：《电力电容器与无功补偿》2017年第2期94-99,共6页Power Capacitor & Reactive Power Compensation

基　　金：国家电网公司科技项目(GY71-15-055)

摘　　要：为了获得1.2倍额定电压、环温55°C运行工况下高压全膜电容器内部温度场分布,分析了高压全膜电容器内部结构,建立了高压全膜电容器三维温度场仿真模型,并基于ANSYS Fluent进行求解,得到高压全膜电容器整体温度场分布,仿真结果表明:电容器外壳由头部至尾部温度逐渐升高,外壳顶部温度高于底部,侧卧时心子最热点集中在心子尾段,立放时心子最热点集中在心子中段。For obtaining the temperature field distribution in the high-voltage all-film capacitor at the ope- ration condition of 1.2 times rated voltage and ambient temperature of 55℃,in this paper,the internal structure of the high voltage all-film capacitor is analyzed,the simulation model of three-dimensional temperature field of high-voltage all-film capacitor is set up and solved based on ANSYS Fluent and the complete temperature field distribution of the high-voltage all-film capacitor is obtained. It is shown by the simulation result that the temperature rise gradually from top to the tail of the capacitor case, the case top temperature is higher than that the case bottom,and if the horizontal layout,the hottest point inside the core is concentrated on the tail section, and if vertical layout, concentrated on the middle section.

关 键 词：高压全膜电容器 温度场 ANSYS FLUENT 数值计算 

分 类 号：TM53[电气工程—电器]