Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer  

作　　者：Han-Han Lu Jing-Ping Xu Lu Liu 卢汉汉;徐静平;刘璐(School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074)

机构地区：[1]School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074

出　　处：《Chinese Physics Letters》2017年第4期83-86,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61176100,61274112 and 61404055

摘　　要：The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor （MOS） capacitors with or without ZrAION as the interfacial passivation layer （IPL） are fabricated and their properties are investigated. The experimental results show that the GaAs MOS capacitor with the ZrAION IPL exhibits better interracial and electrical properties, including lower interface-state density （1.14 × 10^12 cm^-2eV^-1）, smaller gate leakage current （6.82 × 10^-5 A//cm^2 at Vfb ＋1V）, smaller capacitance equivalent thickness （1.5 nm）, and larger k value （26）. The involved mechanisms lie in the fact that the ZrAION IPL can effectively block the diffusion of Ti and O towards the GaAs surface, thus suppressing the formation of interracial Ga-/As-oxides and As-As dimers, which leads to improved interracial and electrical properties for the devices.The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor （MOS） capacitors with or without ZrAION as the interfacial passivation layer （IPL） are fabricated and their properties are investigated. The experimental results show that the GaAs MOS capacitor with the ZrAION IPL exhibits better interracial and electrical properties, including lower interface-state density （1.14 × 10^12 cm^-2eV^-1）, smaller gate leakage current （6.82 × 10^-5 A//cm^2 at Vfb ＋1V）, smaller capacitance equivalent thickness （1.5 nm）, and larger k value （26）. The involved mechanisms lie in the fact that the ZrAION IPL can effectively block the diffusion of Ti and O towards the GaAs surface, thus suppressing the formation of interracial Ga-/As-oxides and As-As dimers, which leads to improved interracial and electrical properties for the devices.

关 键 词：MOS Zr Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Lay 

分 类 号：TM53[电气工程—电器]