Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors  

作　　者：Shi-Li Yan Zhi-Jian Xie Jian-Hao Chen Takashi Taniguchi Kenji Watanabe 颜世莉;谢志坚;陈剑豪;Takashi Taniguchi;Kenji Watanabe(International Center for Quantum Materials, Peking University;Collaborative Innovation Center of Quantum Matter;High Pressure Group,National Institute for Materials Science)

机构地区：[1]International Center for Quantum Materials, Peking University, Beijing 100871 [2]High Pressure Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan [3]Collaborative Innovation Center of Quantum Matter, Beijing 100871

出　　处：《Chinese Physics Letters》2017年第4期87-91,共5页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2013CB921900 and 2014CB920900;the National Natural Science Foundation of China under Grant No 11374021)(S.Yan,Z.Xie,J.-H,Chen);support from the Elemental Strategy Initiative conducted by the MEXT,Japan;a Grant-in-Aid for Scientific Research on Innovative Areas"Science of Atomic Layers"from JSPS

摘　　要：The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

关 键 词：Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors FET BP 

分 类 号：TN386[电子电信—物理电子学]