Performance and reliability improvement of La_2O_3/Al_2O_3 nanolaminates using ultraviolet ozone post treatment  

Performance and reliability improvement of La_2O_3/Al_2O_3 nanolaminates using ultraviolet ozone post treatment

在线阅读下载全文

作  者:樊继斌 刘红侠 孙斌 段理 于晓晨 

机构地区:[1]School of Materials Science and Engineering, Chang'an University [2]School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University

出  处:《Chinese Physics B》2017年第5期376-381,共6页中国物理B(英文版)

基  金:Project supported by the National Natural Science Foundation of China(Grant Nos.61604016 and 51501017);the Fundamental Research Funds for the Central Universities,China(Grant No.310831161003)

摘  要:La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However,the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge,ultraviolet(UV) ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition(ALD) La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing.The x-ray photoelectron spectroscopy(XPS) and conductive atomic force microscopy(AFM) results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600?C annealing,and the electrical characteristics are greatly improved.La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However,the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge,ultraviolet(UV) ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition(ALD) La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing.The x-ray photoelectron spectroscopy(XPS) and conductive atomic force microscopy(AFM) results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600?C annealing,and the electrical characteristics are greatly improved.

关 键 词:ultraviolet annealing ozone photoelectron moisture conductive suppressed replace dielectric annealed 

分 类 号:TB332[一般工业技术—材料科学与工程]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象