Bi_4Ti_3O_(12)掺杂(Ba,Sr)TiO_3基电容器陶瓷介电性能研究  

Study on Dielectric Properties of Bi_4Ti_3O_(12) Doped(Ba,Sr)TiO_3 Capacitor Ceramics

作　　者：陈磊[1] 黄新友[1] 冯梦现 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013

出　　处：《中国陶瓷》2017年第4期25-29,共5页China Ceramics

基　　金：广东省教育部产学研结合项目(2011B090400027)

摘　　要：采用传统固相法制备了Bi_4Ti_3O_(12)掺杂(Ba_(0.71),Sr_(0.29))TiO_3(BST)陶瓷。研究了Bi_4Ti_3O_(12)掺杂量对BST电容器陶瓷介电性能、物相组成和微观结构的影响。结果表明:随着Bi_4Ti_3O_(12)掺杂的增加,BST陶瓷的相对介电常数逐渐减小,介电损耗先减小然后增大,Bi_4Ti_3O_(12)掺杂后的BST陶瓷仍为钙钛矿结构。当Bi_4Ti_3O_(12)掺杂量为1.6 wt%时,BST陶瓷的综合介电性能最好,εr为3744,tanδ为0.0068,ΔC/C为+1.70%,-44.61%,容温特性符合Y5V特性。Bi4Ti3O12-doped （Ba0.71,Sr0.29）TiO3（BST） ceramics were prepared by solid state method. Influence of Bi4Ti3O12 doping amount on the dielectric properties, phase composition and microstructure of BST capacitor ceramics were investigated. The result shows that the relativity permittivity of BST ceramics decreases, the dielectric loss decreases firstly and then increases, Bi4Ti3O12-doped BST ceramics are still the perovskite structure. When the doping amount of Bi4Ti3O12 is 1.6wt%, the BST ceramics possess good comprehensive properties with εr of 3744, tanδ of 0.0068, △C/ C of ＋1.70%, -44.61%, and the capacitance temperature property is suited for Y5V.

关 键 词：钛酸锶钡 电容器陶瓷 Bi4Ti3O12掺杂 介电性能 陶瓷 

分 类 号：TQ174.756[化学工程—陶瓷工业]