非晶ZnTiSnO薄膜的溶液燃烧法制备与TFT器件性能  

Combustion-Solution Processed Amorphous ZnTiSnO Thin Films and Performances as Thin-Film Transistors

作　　者：冯丽莎[1] 江庆军[1] 叶志镇[1] 吕建国[1] FENG Lisha JIANG Qingjun YE Zhizhen LU Jianguo(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China)

机构地区：[1]浙江大学材料科学与工程学院,硅材料国家重点实验,浙江杭州310027

出　　处：《材料科学与工程学报》2017年第2期177-180,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51372002)

摘　　要：本文采用溶液燃烧法,在较低温度下成功制备出非晶ZnTiSnO(ZTTO)薄膜,用作沟道层制备薄膜晶体管(TFT)。研究了Ti掺入对薄膜的结构、光学性能、元素化学态以及对TFT器件电学性能影响。研究结果表明,所制得的ZTTO薄膜均为非晶结构,可见光透过率大于84%;适量Ti的掺入可作为载流子抑制剂有效降低薄膜中的氧空位缺陷浓度,从而提升TFT器件性能。当Zn/Ti摩尔百分比为30/1时,ZTTO TFT性能良好,开关比可达3.54×10~5。Amorphous ZnTiSnO （ZTTO） thin films were prepared by the combustion-solution method at low temperatures. Thin-film transistors （TFTs） were fabricated using the ZTTO film as the channel layer. The effects of introduced Ti on the film properties （e. g. , structural and optical properties and chemical states of elements） and device behavior of the TFTs were investigated in detail. The results show that all films are in an amorphous state and display a high average transmittance over 84% in the visible light region. A moderate Ti content in the matrix can act as carrier inhibitor to effectively reduce the density of oxygen vacancy defects, and so the TFT behaviors are improved. When the molar ratio of Zn/Ti is 30/1, the ZTTO TFTs exhibit acceptable performances with an on/off current ratio of 3.54 ×10^5.

关 键 词：溶液燃烧法 ZnTiSnO薄膜 非晶态 薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学]