WO_3掺杂对BST微波介质陶瓷性能的影响  

Effect of WO_3 Doping on the Properties of BST Microwave Dielectric Ceramics

作　　者：黄春娥[1] 王超[1] 陆小荣[1] 陆旻瑶 

机构地区：[1]无锡工艺职业技术学院,宜兴214206

出　　处：《人工晶体学报》2017年第4期728-732,共5页Journal of Synthetic Crystals

基　　金：江苏高校优势学科建设工程资助项目(PAPD);长江学者和创新团队发展计划(IRT1146)

摘　　要：采用固相反应法,研究了WO_3掺杂对Ba_4Sm_(9.33)Ti_(18)O_(54)(简称BST)微波介质陶瓷相组成、显微结构、烧结性能与介电性能的影响。结果表明:适量添加WO_3能通过不等价离子取代Ti位,产生晶格缺陷,促进离子扩散,不仅能有效降低BST陶瓷的烧结温度至1280℃,而且能减少氧空位的产生,降低介电损耗。同时适量WO_3时有新相BaWO_4生成,它的出现也有利于改善其介电性能。添加0.25wt%WO_3的BST陶瓷在1280℃烧结3 h时取得最佳介电性能:ε_r=80.4,Q·f=11740.85 GHz,τ_f=-23.3×10^(-6)/℃。The effects of WO3 additive on the phase composition, microstructure, sintered properties and dielectric properties of Ba4Sm933 Til8 054 （BST） microwave dielectric ceramics which prepared by conventional solid-state route were investigated. The results show that moderate addition of WO3 can produce the lattice defects and promote ion diffusion by the inequivalent ion replacing Ti-site, Thus effectively lower the s!ntering temperature which dropped to 1280℃, but also reduce the generation of oxygen ion vacancy, decrease the dielectric loss. At the same time, the new phase BaWO4 was generated, which also help to improve the dielectric properties. The 0. 25wt% WO3-doped BST ceramics sintered at 1280℃ for 3 h have the optimal integrated microwave dielectric properties ： εr = 80.4, Q·f = 11740.85 GHz, τf=-23.3×10^-6/℃.

关 键 词：微波介质陶瓷 介电性能 Ba4Sm9.33Ti18O54 WO3 

分 类 号：TQ174.75[化学工程—陶瓷工业]