化学水浴沉积制备三维V2O5薄膜电极及其电容性能  

Preparation of three-dimensional V_2O_5 thin film electrode by chemical bath deposition method and its capacitive properties

作　　者：田颖[1] 刘宗宇[1] 刘晓[1] 黄丽萍[2] 

机构地区：[1]大连交通大学环境与化学工程学院,环境科学与技术辽宁省高校重点实验室,辽宁大连116028 [2]大连理工大学环境学院,工业生态和环境工程教育部重点实验室,辽宁大连116024

出　　处：《功能材料》2017年第4期4075-4079,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(21273025)

摘　　要：采用化学水浴沉积法在泡沫镍表面原位生长V_2O_5薄膜,以扫描电子显微镜(SEM)和X射线衍射(XRD)表征电极的形貌和晶体结构,采用氮气物理吸脱附测量样品的比表面和孔分布。形成的斜方晶系V_2O_5呈现三维花状形貌,比表面和平均孔径分别为68.7m^2/g和7.2nm。采用循环伏安、交流阻抗和恒流充放电技术考察了V_2O_5薄膜电极在3mol/L KNO_3溶液中的电化学电容性能。结果表明,三维花状结构形成的较大的比表面和大孔隙使得电极具有较好的赝电容性能,在电流密度为1,2和3 A/g时比电容分别达到392,338和276F/g,且具有良好的循环稳定性。V2O5 film was directly grown on Ni foam substrate by a tacile chemical bath aeposmon method.The morphology and structure of as-prepared V2O5 film was conducted by SEM and XRD, and the specific surface and pore distribution were measured by nitrogen adsorption and desorption measurements. The orthorhombic V205 presents three-dimensional flower-like porous microstructure with BET area of 68.7 m^2/g and average pore diameter of 7.2 nm. The electrochemical performance of V2O5 film electrode in 3 mol/L KNOa solution was investigated by cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge/discharge measurements. The results demonstrates that the 3D flower-like microstructure and large pores shows excellent pseudocapacitance behavior and good stability, delivering capacitances of 392, 338 and 276 F/g in 3 mol/L KNO3 at current densities of 1, 2 and 3 A/g, respectively.

关 键 词：化学水浴沉积 三维V2O5 薄膜电极 电容性能 

分 类 号：TQ15[化学工程—电化学工业]