Low-crosstalk silicon photonics arrayed waveguide grating  被引量:2

Low-crosstalk silicon photonics arrayed waveguide grating

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作  者:张志群 胡娟 陈华 李方江 赵磊 桂进斌 方青 

机构地区:[1]Department of Library,Kunming University of Science and Technology,Kunming 650500,China [2]College of Science,Kunming University of Science and Technology,Kunming 650500,China

出  处:《Chinese Optics Letters》2017年第4期39-42,共4页中国光学快报(英文版)

基  金:partially supported by the National Natural Science Foundation of China under Grant Nos.61674072,61565011,and 51304097

摘  要:In this Letter,we demonstrate a 1×4 low-crosstalk silicon photonics cascaded arrayed waveguide grating,which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2μm buried oxide layer.The measured on-chip transmission loss of this cascaded arrayed waveguide grating is~4.0 dB,and the fiber-towaveguide coupling loss is 1.8 dB/facet.The measured channel spacing is 6.4 nm.The adjacent crosstalk by characterization is very low,only -33.2 dB.Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ~-12.5 dB,the crosstalk of more than 20 dB is dramatically improved in this cascaded device.In this Letter,we demonstrate a 1×4 low-crosstalk silicon photonics cascaded arrayed waveguide grating,which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2μm buried oxide layer.The measured on-chip transmission loss of this cascaded arrayed waveguide grating is~4.0 dB,and the fiber-towaveguide coupling loss is 1.8 dB/facet.The measured channel spacing is 6.4 nm.The adjacent crosstalk by characterization is very low,only -33.2 dB.Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ~-12.5 dB,the crosstalk of more than 20 dB is dramatically improved in this cascaded device.

关 键 词:crosstalk waveguide photonics grating cascaded spacing buried wafer thick facet 

分 类 号:TN929.1[电子电信—通信与信息系统]

 

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