K波段低噪声集成片上CMOS接收前端设计  

A CMOS Receiver Front-End for K-Band Low-Noise System-on-Chip

作　　者：李潇然[1] 仲顺安[1] LI Xiao-ran ZHONG Shun-an(School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China)

机构地区：[1]北京理工大学信息与电子学院,北京100081

出　　处：《北京理工大学学报》2017年第3期287-291,共5页Transactions of Beijing Institute of Technology

基　　金：国家自然科学基金资助项目(61301006;61271113)

摘　　要：基于TSMC 90nm CMOS工艺,设计实现K波段片上集成CMOS接收前端.接收前端由两级差分共源共栅结构低噪声放大器、双平衡吉尔伯特单元结构下变频混频器组成.射频输入、本振输入以及模块间采用片上巴伦进行匹配.测试结果表明,在射频输入频率23.2GHz时,转换增益为27.6dB,噪声系数为3.8dB,端口隔离性能良好,在电源电压为1.2V下,功耗为35mW,芯片面积为1.45×0.60mm^2.The Si-base technology can help SOC（system-on-chip）to achieve smaller size,lower cost and low power consumption.In this paper,a fully integrated K-band CMOS receiver frontend was designed based on TSMC 90 nm CMOS technology.The receiver front-end consisted of a 2-stage differential cascode low noise amplifier（LNA）and a double balanced Gilbert cell downconversion mixer.The RF input,LO input and between the LNA and mixer were matched with on-chip transformer Balun.Measurement results show that,when RF is at 23.2 GHz,the conversion gain can reach 27.6dB,the noise figure just is 3.8dB,and a high isolation can be got.The receiver chip consumes 35 mW with a 1.2Vpower supply,and only occupies a chip area of1.45×0.60mm^2.

关 键 词：K波段 接收前端 低噪声放大器 下变频混频器 CMOS 

分 类 号：TN432[电子电信—微电子学与固体电子学]