基于ZnO阵列的银表面二次电子发射抑制技术  

Technique for inhibiting secondary electron emission of silver based on ZnO array

作　　者：胡天存[1,2] 曹猛[1] 鲍艳[3] 张永辉[3] 马建中[3] 崔万照[2] HU Tiancun CAO Meng BAO Yan Zhang Yonghui MA Jianzhong CUI Wanzhao(Key Laboratory for Physical Electronics and Devices Information Engineering, Xi＇an Jiaotong University National Key Laboratory of Science and Technology on （Xi＇an）, Xi＇an 710100, China of the Ministry of Education, School of Electronic and Xi＇an 710049, China Space Microwave, China Academy of Space Technology College of Bioresources Chemistry and Materials Engineering, Shaanxi University of Science ＆ Technology, Xi＇an 710021, China)

机构地区：[1]西安交通大学电子与信息工程学院电子物理与器件教育部重点实验室,西安710049 [2]中国空间技术研究院西安分院空间微波技术重点实验室,西安710100 [3]陕西科技大学轻工科学与工程学院,西安710021

出　　处：《中国空间科学技术》2017年第2期54-60,共7页Chinese Space Science and Technology

基　　金：国家自然科学基金(U1537211);空间微波技术重点实验室基金(9140C530101130C53013;9140C530101140C53231)

摘　　要：随着卫星有效载荷的射频功率越来越大,传统的微放电抑制方法已经无法满足大功率卫星有效载荷的需求。降低大功率射频部件内表面的二次电子发射系数是抑制微放电效应的重要方法之一,通过在金属银表面构造纳米量级ZnO阵列,实现了纳米尺度银陷阱结构的制备,研究了晶种制备方式、锌盐浓度对ZnO阵列生长的影响。结果表明,采用紫外照射法制备晶种获得的ZnO阵列在样片表面分布均匀,提高锌盐浓度可改善ZnO阵列的分布均匀性。分析了ZnO阵列排列密度对银膜构筑的影响,发现在低密度的ZnO阵列上更加容易镀覆金属银。因此,获得了镀银表面基于ZnO阵列的陷阱结构制备的工艺技术,实现金属银表面二次电子发射系数最大值降低36.3%。With satellite payload RF power increasing, traditional methods of inhibiting multipactor are unable to meet the needs of high-power satellite payloads. Reducing the secondary electron emission coefficient of internal surface of high-power RF components is an important method for inhibiting mutipactor.Nanoscale silver trapping structure was prepared by constructing nano-dimension ZnO arrays,and the effects of preparing methods of seeds and zinc salt concentration on the growth of ZnO arrays were studied.The results show that homogeneous ZnO arrays are obtained on the sample surface by using the UV radiation for seeds synthesization and increasing zinc salt concentration.The effect of packing density of ZnO arrays on silver films construction was investigated. It shows that low-density ZnO arrays are suitable for deposition of silver on the surface of ZnO nanorods.Therefore,the technology for preparation of trap structure silver based on ZnO arrays was obtained,and the maximum secondary electron emission coefficient of silver decreased by 36.3%.

关 键 词：微放电 二次电子发射系数 ZnO阵列 陷阱结构 抑制 

分 类 号：TG178[金属学及工艺—金属表面处理]