盒栅式电子倍增器模拟计算  

Numerical Simulation of Characteristics of Box Type Electron Multiplier

作　　者：谭孝青 吴胜利[1] 王洪广[1] 胡文波[1] 田进寿[2] 

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室,西安710049 [2]中国科学院西安光学精密仪器研究所,西安710049

出　　处：《真空科学与技术学报》2017年第4期380-385,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(51271140;61275023)

摘　　要：采用三维电磁分析软件CST对盒栅式电子倍增器结构进行建模,利用控制变量的分析方法修改模型参数,模拟计算了不同打拿极栅网结构参数和出射电子能量条件下电子倍增器内部的电场分布、电子运动轨迹以及倍增器增益。研究分析了打拿极栅网结构参数和出射电子能量对电子倍增器特性的影响。数值模拟结果表明,倍增器打拿极栅网密度过密或者过疏均会降低电子倍增器的增益,在打拿极栅网间距为0.9 mm时电子倍增器增益最高;较小的二次电子出射能量有利于改善倍增器内电子轨迹的发散并提高倍增器增益。The characteristics of a box type electron multiplier were mathematically modeled,theoretically analyzed and numerically simulated with software CST for the purpose of design optimization. The impact of the meshsize of dynode grid and emission probability/energy of secondary electron on the electric field distribution, electron trajectory and gain of the electron multiplier was investigated. The simulated results show that the dynode grid meshsize, emission probability and energy of secondary electron all have a major impact on the gain of the electron multiplier. To be specific, as the mesh-size increases, the gain changes in an increase-decrease mode, possibly because of the blocking, focusing/defocusing of the grid mesh, and a mesh-size of 0.9mm results in the highest gain of the multiplier; but as the secondary electron energy decreases, the gain increases, simply because of the improved convergence of the electron trajectories.

关 键 词：盒栅式电子倍增器 电子轨迹 电子倍增器增益 CST模拟计算 

分 类 号：TN152[电子电信—物理电子学] O463.7[机械工程—光学工程]