软穿通型3300 V/1200 A IGBT模块建模与仿真  

Modeling and Simulation of Soft-punch-through 3300 V/1200 A IGBT Module

作　　者：崔梅婷 潘艳 武伟 吴鹏飞 孙帅 

机构地区：[1]全球能源互联网研究院,北京市昌平区102209

出　　处：《智能电网》2017年第4期329-333,共5页Smart Grid

基　　金：国家电网公司科技项目(SGRI-WD-71-14-005)~~

摘　　要：绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)是功率模块作为电力电子领域中的重要大功率器件,在大容量场合越来越受重视。高压大功率IGBT模块国产化需求迫切,针对国产IGBT器件的模型研究成为不可缺少的环节。提出一种IGBT模块建模方法,基于IGBT工艺仿真与物理机制建立IGBT芯片模型,利用Q3D软件提取IGBT模块杂散参数,在Saber软件中结合芯片模型与杂散参数建立IGBT模块模型。然后,采用IGBT模块模型在Saber软件中搭建双脉冲仿真电路,得到IGBT模块的仿真波形。最后进行实验研究,将仿真波形与实验波形进行对比,结果基本一致,可见利用该方法所建的IGBT模块模型比较精确,为IGBT器件的应用仿真研究奠定了基础。As an important large power device in the field of power electronics, insulated gate bipolar transistor （/GBT） power module is being more and more valued in large capacity situation. Localization of high voltage large power IGBT module is in urgent demand, and studying the model of domestic IGBT device becomes an indispensable link. A method of IGBT module modeling is proposed in this paper. Based on the IGBT process simulation and physical mechanism, IGBT chip model is built. Then IGBT module stray parameters are extracted by Q3D software and IGBT module model is built by combining chip model and stray parameters in Saber software. Then, double-pulse simulation circuit is built in Saber software by applying IGBT module model, and simulation waveforms of IGBT module are plotted. Finally, experiment research is done. Comparing with the experiment waveforms, simulation waveforms are similar to them, from which a conclusion can be drawn that the IGBT module model built by applying the method presented in this paper is relatively precise, which lays a foundation for the application simulation research of IGBT device.

关 键 词：绝缘栅双极晶体管(insulated GATE BIPOLAR transistor IGBT) 建模 仿真 测试 

分 类 号：TN322.8[电子电信—物理电子学]