宽带混频器的优化设计  

Optimized Design of a Wideband Mixer

作　　者：吴会丛[1] 于洁[1] 吴楠[2] 李斌[2] 

机构地区：[1]河北科技大学信息科学与工程学院,石家庄050018 [2]中国电子科技集团公司第五十四研究所,石家庄050081

出　　处：《半导体技术》2017年第5期330-334,共5页Semiconductor Technology

基　　金：河北省自然科学基金资助项目(F2014208113)

摘　　要：采用0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计并实现了一款单片宽带混频器。该混频器采用双平衡混频器结构,以串联的两个漏源相连的PHEMT作为环形二极管电桥中的二极管以提升混频器线性度。本振巴伦和射频巴伦均采用螺旋线式Marchand巴伦,为降低巴伦的幅度及相位不平衡度,采用遗传算法对巴伦的几何参数进行了优化设计。该混频器电路采用0.25μm GaAs PHEMT工艺实现,芯片面积为1.5 mm×1.1 mm。测试结果表明,当本振功率为20 dBm时,变频损耗小于7 dB,输入三阶交调点IIP_3大于22 dBm。本振端口到射频端口和中频端口的隔离度均大于30 dB。A monolithic wideband mixer was designed and implemented using a 0.25 μm GaAs pseudomorphic high electron mobility transistor （PHEMT） process. The mixer adopted the double balanced mixer structure, using two PHEMTs connected in series with the source and drain as the diode in the ring diode bridge to improve the linearity of the mixter. The spiral Marchand Balun was used as LO Balun and RF Balun. To minimize the amplitude and the phase imbalance of the Balun, the geometric parameters of the Balun in the mixer were optimized by using the genetic algorithm. The mixer circuit was fabricated in a 0. 25 μm GaAs PHEMT process with a chip area of 1.5 mm×1. 1 mm. The measurement results show that when the LO power is 20 dBm, the mixer achieves a conversion loss of less than 7 dB with an liP3 of higher than 22 dBm. Meanwhile, the LO-RF isolation and LO-IF isolation are higher than 30 dB.

关 键 词：砷化镓(GaAs) 混频器 高线性度 遗传算法 巴伦 

分 类 号：TN43[电子电信—微电子学与固体电子学]