存在气泡缺陷触头盒电场仿真研究  

Electric Field Analysis of Bubble Defects in Contact Box

作　　者：操李节 汪霄飞[2] 徐勇[1] 张毅磊 邝佳军 罗新[1] 

机构地区：[1]湖南大学电气与信息工程学院,长沙410082 [2]湖南省电力试验研究院,长沙410007

出　　处：《高压电器》2017年第5期141-145,153,共6页High Voltage Apparatus

摘　　要：利用有限元分析软件Ansys建立三维模型,对高压开关柜母线室中触头盒存在气泡缺陷的情况进行仿真计算,研究了在交流情况下气泡缺陷、不同大小的气泡、不同位置的气泡以及不同电压等级对触头盒气泡缺陷附近电场的影响。结果表明:缺陷的出现使缺陷中电位在气泡上半部分集中;缺陷附近的电场强度出现明显的畸变,缺陷中心电场强度变大;缺陷越大,电场畸变越大;缺陷的位置对电场的畸变并没有太大的影响;电压等级的提高使缺陷中电场的畸变更加明显。Using finite element analysis software Ansys to establish a 3D models, the presence of the contact box for high voltage switchgear bus room in bubble defects are simulated. In the exchange situation to study changes in the electric field near the defects, under the case of local defects and defects of different sizes and different locations of the defect. The results show that： the defect resulting in the electric potential concentrate at the upper half of the bubble; electric field intensity near the defect have obvious distortion, the electric field intensity in the center of defect become large; the bigger of defect, the bigger of electric field distortion; the location of the defect does not have much impact on the distortion of the electric field; the increase of the voltage level make the distortion of electric field is more obvious.

关 键 词：ANSYS 触头盒 气泡缺陷 电场强度 

分 类 号：TM591[电气工程—电器]