Nanoscale Ⅲ-Ⅴ on Si-based junctionless tunnel transistor for EHF band applications  

作　　者：Yogesh Goswami Pranav Asthana Bahniman Ghosh 

机构地区：[1]Department of Electrical Engineering,Indian Institute of Technology Kanpur [2]Microelectronics Research Center,University of Texas at Austin

出　　处：《Journal of Semiconductors》2017年第5期42-48,共7页半导体学报（英文版）

摘　　要：A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor（SG-JLTFET） has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped channel of GaSb i.e.gallium antimonide which is grown epitaxially over silicon substrate.The DC performance parameters such as I（on）,I（on）/I（off）,average and point subthreshold slope as well as device parameters for analog applications viz.transconductance gm,transconductance generation efficiency gm/ID,various capacitances and the unity gain frequency fT are studied using a device simulator.Along with examining its endurance to short channel effects,the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET（DG-JLTFET）.The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor（SG-JLTFET） has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped channel of GaSb i.e.gallium antimonide which is grown epitaxially over silicon substrate.The DC performance parameters such as I（on）,I（on）/I（off）,average and point subthreshold slope as well as device parameters for analog applications viz.transconductance gm,transconductance generation efficiency gm/ID,various capacitances and the unity gain frequency fT are studied using a device simulator.Along with examining its endurance to short channel effects,the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET（DG-JLTFET）.The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.

关 键 词：single gate junctionless tunnel field effect transistor （SG JL-TFET） gallium antimonide band-to-band tunnelling sub-threshold slope （SS） 

分 类 号：TN386[电子电信—物理电子学]